dmp210dufb4 document number: ds35026 rev. 1 0 - 2 1 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 p - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25 c - 20v 5 ? @ v gs = - 4.5v - 200ma 7 ? @ v gs = - 2 . 5 v - 1 7 0ma 1 0 ? @ v gs = - 1.8v - 140ma 1 5 ? @ v gs = - 1. 5 v - 5 0ma description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power m anagement f unctions features and benefits ? p - channel mosfet ? low on - resistance ? very low gate threshold voltage v gs(th) ? low input capacitance ? fast switching speed ? ultra - small surfaced mount package ? ultra - l ow p ackage p rofile, 0.4mm m aximum p ackage h eight ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: x2 - dfn1006 - 3 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C nipdau over copper l eadframe ; solderable per mil - std - 202, method 208 ? weight: 0.001 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmp210dufb4 - 7 x2 - dfn1006 - 3 3,000/tape & reel dmp210dufb4 - 7b x2 - dfn1006 - 3 10,000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : // www.diodes.com/products/packages.html . esd protected x2 - dfn1006 - 3 top view internal schematic bottom view equivalent circuit source gate protection diode gate drain e4 d s g
dmp210dufb4 document number: ds35026 rev. 1 0 - 2 2 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 marking information dmp210dufb4 - 7 dmp210dufb4 - 7b n1 = part marking code n1 top view dot denotes drain side n1 n1 n1 n1 n1 n1 top view bar denotes gate and source side n1 n1 n1 n1 top view bar denotes gate and source side n1 from date code 1527 (yyww), this changes to :
dmp210dufb4 document number: ds35026 rev. 1 0 - 2 3 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 10 v continuous drain current (note 5 ) v gs = - 4.5v steady state t a = + 25c t a = + 70c i d - 200 - 160 ma continuous drain current (note 5 ) v gs = - 1.8v steady state t a = + 25c t a = + 70c i d - 140 - 110 ma pulsed drain current t p = 10 s i dm - 600 ma thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 3 50 mw thermal resistance, junction to ambient ( note 5 ) r ja 3 57 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 20 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ? ? ? ds = - 16v, v gs = 0v v ds = - 5.0v, v gs = 0v gate - source leakage i gss ? ? ? ? 1 ? 1 0 na a a v gs = ? ds = 0v v gs = ? ds = 0v v gs = ? ds = 0v on characteristics (note 6 ) gate threshold voltage @t j = + 25c v gs(th) - 0.5 ? ds = v gs , i d = - 250 a gate threshold voltage (note 7 ) @t j = 0 c @t j = + 85 c @t j = + 100 c v gs(th) - 0.5 5 ? ? ds = v gs , i d = - 250 a - 0. 4 0 ? ? ? ? ds(on) ? ? 5 ? gs = - 4.5v, i d = - 100ma ? ? gs = - 2.5v, i d = - 50ma ? ? gs = - 1.8v, i d = - 20ma ? ? 15 v gs = - 1.5v, i d = - 10ma ? ? ? v gs = - 1.2v, i d = - 1ma forward transfer admittance |y fs | 200 ? ? ds = - 10v, i d = - 200m a diode forward voltage (note 5 ) v sd - 0.5 ? gs = 0v, i s = - 115ma dynamic characteristics (note 7 ) input capacitance c iss ? ds = - 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? rss ? switching characteristics (note 7 ) turn - on delay time t d(on) ? ? gs = - 4.5v, v dd = - 15v i d = - 180ma, r g = 2.0 r ? ? d(off) ? ? f ? ? ? ? notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to production testing.
dmp210dufb4 document number: ds35026 rev. 1 0 - 2 4 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 v , drain-source voltage(v) fig. 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d v = -4.5v gs v = -2.5v gs v = -1.8v gs v = -1.5v gs v = -1.2v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) fig. 2 typical transfer characteristics gs v =5.0v ds 1 10 100 0.001 0.01 0.1 1 i , drain-source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? r ( ) ave @ v =2.5v ds(on) gs ? r ( ) ave @ v =4.5v ds(on) gs ? r ( ) ave @ v =1.8v ds(on) gs ? r ( ) ave @ v =1.5v ds(on) gs ? 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? id, drain current (a) fig. 4 typical on-resistance vs. drain current and temperature ave r (r) @ 25 c ds(on) ? v =4.5v gs ave r (r) @ 85 c ds(on) ? ave r (r) @ 125 c ds(on) ? ave r (r) @ 150 c ds(on) ? ave r (r) @ -55 c ds(on) ? 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) t , junction temperature ( c) fig. 5 on-resisitance variation with temperature j ? r ( ) @v =2.5v, i =50ma ds(on) gs d ? r ( ) @v =4.5v, i =200ma ds(on) gs d ? 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) t , junction temperature ( c) fig. 6 on-resisitance vs.temperature j ? r ( ) @v =2.5v, i =50ma ds(on) gs d ? r ( ) @v =4.5v, i =200ma ds(on) gs d ?
dmp210dufb4 document number: ds35026 rev. 1 0 - 2 5 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j ? i = 250 a d ? i = 1ma d 0 0.2 0.3 0.4 0.5 i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1 1.2 0.1 v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0.6 t = 25 c a ? 1 10 100 0 4 8 12 16 20 f = 1mhz v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss c oss c rss 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 369c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 0.1 1 10 100 1,000 10,000 0 2 4 6 8 10 12 14 16 18 20 v , drain-source voltage(v) fig. 10 typical drain-source leakage current vs. voltage ds i , l e a k a g e c u r r e n t ( n a ) d s s t = a -55 c ? t = a 25 c ? t = a 85 c ? t = 150 c a ?
dmp210dufb4 document number: ds35026 rev. 1 0 - 2 6 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x 2 - dfn1006 - 3 dim min max typ a ? ? a1 0 .00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.05 1.00 e 0.55 0.65 0.60 e - - 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 - - 0.40 z 0.02 0.08 0.05 all dimensions in mm dimensions value (in mm) c 0.70 g1 0.3 0 g2 0.2 0 x 0. 40 x1 1.10 y 0. 25 y1 0.7 0 c y1 x1 x g2 y g1 l3 l1 l2 e b d e a z b2 a1 seating plane pin #1 id
dmp210dufb4 document number: ds35026 rev. 1 0 - 2 7 of 7 www.diodes.com may 2015 ? diodes incorporated dmp210dufb4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes in corporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com
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